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Transparent Fast Curing Silicone Potting Compound HN-8808 25A ODM for IGBT Module LED Encapsulation Protection

Transparent Fast Curing Silicone Potting Compound HN-8808 25A ODM for IGBT Module LED Encapsulation Protection

Product Details:
Place of Origin: Guangdong, China
Brand Name: Hanast
Certification: RoHS, REACH
Model Number: HN-8808
Detail Information
Place of Origin:
Guangdong, China
Brand Name:
Hanast
Certification:
RoHS, REACH
Model Number:
HN-8808
Product Model:
HN-8808
Mixing Ratio:
10:1 (A:B By Weight)
Appearance:
Transparent / White / Grey Liquid
Viscosity A:
2000 MPa·s
Viscosity B:
50 MPa·s
Specific Gravity:
0.98
Hardness:
Shore A 25 (flexible Gel)
Dielectric Strength:
18-25 KV/mm
Volume Resistivity:
≥1×10^14 Ω·cm
Dielectric Constant (1MHz):
2.5-3.0
Dielectric Loss (1MHz):
≤4×10^-3
Thermal Conductivity:
0.1-0.20 W/m·K
Operating Time At 25°C:
1-2 Hours
Curing Time At 25°C:
8-12 Hours
Temperature Range:
-57°C To 250°C
Highlight:

High Light

Highlight:

Fast Curing Silicone Potting Compound

,

IGBT Module Encapsulation Potting Material

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ODM Transparent Electronic Potting Gel

Trading Information
Minimum Order Quantity:
1 Set
Price:
Negotiable
Packaging Details:
10kg/20kg plastic barrel, Export-grade corrugated carton.
Delivery Time:
3-5 working days for sample, 7-15 days for bulk order
Payment Terms:
T/T,L/C,PayPal,Western Union
Supply Ability:
500 kg per Month
Product Description
Transparent Fast Curing Silicone Potting Compound HN-8808 25A ODM for IGBT Module LED Encapsulation Protection
Transparent Fast Curing Silicone Potting Compound HN-8808
HN-8808 is a transparent fast-curing two-component silicone potting compound optimized for IGBT power module encapsulation and high-voltage LED array protection. Achieves full cure in 8-12 hours at room temperature with a 1-2 hour pot life—balancing production speed with ample working time. The combination of 18-25 kV/mm dielectric strength, low 2.5-3.0 dielectric constant, and Shorre A 25 flexible stress relief makes it ideal for power semiconductor assemblies. Full ODM customization from our 40,000 m² Shenzhen facility.
Key Features
⚡ IGBT Module Optimized Insulation
Purpose-engineered for IGBT power module encapsulation where high dielectric withstand (18-25 kV/mm) and low dielectric loss (≤4×10⁻³ at 1 MHz) are critical. The low 2.5-3.0 dielectric constant minimizes parasitic capacitance and switching losses in high-frequency power conversion circuits, motor drives, and traction inverters.
⏱️ 8-12 Hour Fast Room Temp Cure
Full encapsulation cure in just 8-12 hours at ambient 25 °C—significantly faster than many competing 24+ hour formulations. This reduces work-in-progress inventory and accelerates production throughput. 1-2 hour pot life allows single-batch mixing for large or multiple IGBT module assemblies without rushing.
💡 High-Voltage LED Encapsulation
Transparent formulation enables optical clarity for LED COB modules while delivering 18-25 kV/mm insulation for high-voltage LED strings (277V, 347V, 480V systems). Non-yellowing under sustained LED heat and UV exposure. Excellent thermal dissipation through the 0.1-0.20 W/m·K pathway for LED junction temperature management.
🏭 ODM Fast-Track Production
Tailor viscosity, hardness, color, and cure profile for your IGBT or LED production line. Our 40,000 m² facility with dedicated R&D lab delivers custom formulation samples in 3-5 working days. Multi-ton batch production with rigorous ISO 9001 lot-to-lot consistency. Full MSDS and TDS documentation with every shipment.
🔬 Low Dielectric Loss Power Electronics
Dielectric loss factor of ≤ 4×10⁻³ at 1 MHz ensures minimal energy dissipation in high-frequency switching applications. Combined with 2.5-3.0 dielectric constant, this compound is ideal for SiC and GaN wide-bandgap power modules operating at frequencies above 100 kHz where dielectric heating would otherwise limit performance.
🛡️ Thermal Stress Relief for Power Modules
The soft Shore A 25 flexible gel absorbs CTE mismatch stress between copper busbars, ceramic substrates (Al₂O₃/AlN), and silicone gel encapsulant in IGBT modules. Prevents wire bond lift-off and solder fatigue during power cycling from -57°C cold-start to 250°C junction temperature excursions.
Target Applications
Application Use Case Why HN-8808
IGBT Power Modules Industrial motor drives, traction inverters, UPS systems, welding power supplies 18-25 kV/mm, Dk 2.5-3.0, Df ≤4×10⁻³, 25A stress relief
High-Voltage LED Systems 347V/480V LED drivers, stadium lighting, horticultural LED arrays Transparent, non-yellowing, 0.98 lightweight, thermal pathway
Power Semiconductor Packaging SiC MOSFET modules, GaN HEMT packages, power diode assemblies Low Df at 1MHz for 100kHz+ switching, wide bandgap compatible
Industrial Power Supplies High-power SMPS, railway power converters, EV charging station modules 8-12h fast cure, 1-2h pot life, -57°C to 250°C range
Technical Specifications
Property Value
Appearance Transparent / White / Grey liquid
Viscosity A / B 2000 mPa·s / 50 mPa·s
Specific Gravity 0.98
Hardness Shore A 25 (flexible gel)
Dielectric Strength 18-25 kV/mm
Volume Resistivity ≥1×10¹⁴ Ω·cm
Dielectric Constant (1MHz) 2.5-3.0
Dielectric Loss (1MHz) ≤4×10⁻³
Thermal Conductivity 0.1-0.20 W/m·K
Operating Time at 25°C 1-2 hours
Curing Time at 25°C 8-12 hours
Temperature Range -57°C to 250°C
IGBT & LED ODM Potting Solutions
Custom dielectric, thermal, and cure-speed formulations for your power module or LED application. ISO 9001 certified 40,000 m² facility. Sample batches in 3-5 working days.
Ratings & Review

Overall Rating

5.0
Based on 50 reviews for this supplier

Rating Snapshot

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All Reviews

J
J*e
Japan Jul 20.2026
Price and quality are our top priorities—I've been in this trade for years, and they truly stand out.
J
J*e
Japan Jul 20.2026
Price and quality are our top priorities—I've been in this trade for years, and they truly stand out.